PAM-XIAMEN Offers AlGaN–GaN HEMTs Grown on Sapphire Substrates
08/14/2014

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN)

Online PR News – 14-August-2014 – XIAMEN,CHINA – Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2"/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production in 2012. And now PAM-XIAMEN give a example as follows:

2" GaN HEMT on Sapphire

Substrate: Sapphire

Nucleation Layer: AlN

Buffer Layer: GaN (1800 nm)

Spacer: AlN (1nm)

Schottky Barrier: AlGaN (21 nm, 20%-30% Al)

Cap: GaN (1.5nm)

2DEG density:>10^13 cm-2 and Mobility>1600cm^2/vs.

RMS roughness(AFM):