OSI Optoelectronics Introduces 800 nm Silicon Avalanche Photodiode Series
10/11/2012

OSI OptoElectronics (www.osioptoelectronics.com) , an OSI Systems Company, introduces the APD Series 8-150, a new family of silicon avalanche photodiodes optimized for operation in the 800 nm wavelength region.

Online PR News – 11-October-2012 – October 9, 2012 – Hawthorne, CA – OSI OptoElectronics (www.osioptoelectronics.com) , an OSI Systems Company, introduces the APD Series 8-150, a new family of silicon avalanche photodiodes optimized for operation in the 800 nm wavelength region. Available in hermetically-sealed metal packages, the devices offer lower noise and high sensitivity over high bandwidths up to 1 GHz. The new APD models feature 0.2, 0.5, 1.0, and/or 1.5 mm (diam.) active areas and exhibit low temperature coefficients of 0.45/V degrees C, making them ideal for optical fiber communication, laser range finder, and high-speed photometry applications.

Storage temperature for the new devices is from minus 55 degrees to 125 degrees C, with an operating temperature range from minus 40 degrees C to 100 degrees C, maximum. For more information about OSI’s new silicon avalanche photodiode Series 8-150 series, please visit: www.osioptoelectronics.com/standard-products/new-products.aspx .