PAM-XIAMEN Offers Gallium nitride
Online PR News – 15-November-2017 – XIAMEN,CHINA – Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line.
Dr. Shaka, said, "We are pleased to offer GaN substrate to our customers including many who are developing better and more reliable for GaN HEMTs, which have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. Second generation technology with shorter gate lengths will be addressing higher frequency telecom and aerospace applications. Our GaN substrate has excellent properties, it’s a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants. GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle. Gallium nitride compounds also tend to have a high dislocation density, on the order of a hundred million to ten billion defects per square centimeter. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our GaN substrate are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products."
PAM-XIAMEN's improved GaN product line has benefited from strong tech,support from Native University and Laboratory Center.
Now it shows an example as follows:
FS GaN substrate, n type, undoped: Resistivity